Internship M2 : OH surface termination study for diamond transistors

Job description

In order to continue to be a leader in diamond power electronics, the R&D components team is constantly working to improve its components. One of the components we are developing with big interest is the D3MOSFET field-effect transistor. An important step in the realization of the D3MOSFET is the interface between the diamond and the gate oxide. This interface is linked to the surface termination of the diamond layer. Indeed, the termination will have an effect on the oxide properties and hence on the electrical characteristics of our future devices. During this internship, we propose to continue the work begun at DIAMFAB by studying the -OH surface termination.

Your responsabilities

The intern will be responsible for:

Carry out the -OH surface termination of diamond
Produce and characterize MIMCAP (metal-insulator-metal capacitor) and MOSCAP (metal-oxide-semiconductor capacitor) test components
Process, analyze, present collected data and write report

Your profile

The intern should be preparing a 5-year degree (Master 2, engineering school) in nano-sciences, nano-technologies, semiconductor technologies, electrical engineering or related fields. Experience in a Cleanroom environment would be an asset. Motivation, organization and rigor are the qualities we are looking for, as is the ability to fit into a young, dynamic team.
A CIFRE thesis between DIAMFAB and the LAPLACE laboratory may be possible after the internship.

Grenoble

Internship M2

To apply, please fill in this form with your CV and covering letter!