Work-linked student: M2 Electrical Characterization and Simulation
Job description

As part of the development of our technology, we are looking for a work-linked student to take part in improving the performance of our diamond-based devices for power electronics applications. 

To demonstrate the maturity of our technology, we are designing, among other things, Schottky diodes capable of delivering high current densities in on-state, withstanding high operating voltages in off-state, and without degradation at high temperatures (up to 300°C). 

In charge of electrically characterizing the fabricated diodes, you will extract their operating parameters both in forward and reverse bias. You will also be responsible for simulating the behavior of the Schottky diodes using TCAD-type software, based on the finite element method. The experimental parameters extracted will be used to calibrate the simulations. A better understanding of the operation of the diodes will result in higher current density and maximum voltage values than are already obtained. 

This work-study position offers you the unique opportunity to compare experimental data with simulation predictions, while developing a wide range of high-value technical skills. 

Your responsabilities

In addition to its unique geographical location, DIAMFAB is a human-scale startup-dynamic, multidisciplinary, and enriched by a diversity of backgrounds and expertise. 

You will work in the Devices team under the supervision of Julien BASSALER, R&D engineer in electrical characterization, and Vishwajeet MAURYA, R&D engineer in electrical characterization and simulation. You’ll be working in a dynamic and collaborative environment, alongside people with a wide range of skills.

Your main responsibilities will include: 

  • Electrical characterization of current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) at low and high temperatures on diamond Schottky diodes. 
  • Extraction of operating parameters (on-state resistance, leakage current, etc…) 
  • TCAD simulation of diamond Schottky diodes. 
  • Comparison between vertical and pseudo-vertical architectures of Schottky diodes. 
  • Qualitative and quantitative study of the performance of Schottky diodes. 

You will also be responsible for: 

  • Analysis, synthesis and presentation of your results. 
  • Writing of a report. 
Your profile
  • You are currently in your fourth year of a Bachelor’s degree, pursuing an engineering or Master’s degree in Materials Science, Electronics, or a similar field. 
  • You have knowledge in semiconductor physics and/or electrical characterization. First experience with TCAD simulation tools would be an advantage. 
  • You are rigorous, autonomous, and have an analytical mind. 
  • An English level of at least B2 is required. 
Grenoble/Fontaine - Isère, FRANCE
Work-linked student
To apply, please fill in this form with your CV and covering letter!