The diodes and transistors manufactured by DIAMFAB consist of boron-doped diamond active layers deposited by MPCVD (Microwave Plasma enhanced Chemical Vapor Deposition) on commercial synthetic diamond substrates. As part of its R&D activity, the company is seeking to improve the characteristics of its power components by minimizing dislocations within the active layers.
To observe and measure the density of dislocations reaching the surface of our diamond layers, a destructive method of revealing these dislocations by selective etching was recently developed within the start-up in collaboration with the SiMaP laboratory (Grenoble). The use of this new technique will be the framework of this internship.
The intern will work in DIAMFAB’s R&D team. His/her mission will consist of i) continuing the study of the influence of etching parameters on the morphology and shape of the etching pits appearing on the diamond surface with a view to improving the process and ii) using existing etching conditions to characterize the diamond layers synthetized within the start-up. To do this, he/she will be required to:
The trainee should have a Master 2 (or equivalent) in Materials Science, Physics, Chemistry or Process Engineering. Experience with some of the techniques mentioned above would be a plus. The trainee should also be rigorous, organized and attracted by experimental research.
This internship may continue with a CIFRE thesis.
DIAMFAB
25 avenue des Martyrs
38042 Grenoble Cedex 9
Contact@diamfab.com
Done by Création site web Grenoble