The atoms of carbon which constitute the diamond are arranged following the face centered cubic crystal structure with half of its tetrahedral sites fulfilled which gives to diamond a great part of its superlative properties.
Two processes are used to synthesize it : HPHT (High Pressure High Temperature) or MPCVD (Microwave Plasma Chemical Vapor Deposition) which we use at DIAMFAB.
Diamond can be doped p-type with boron (B) or n-type with nitrogen (N) or phosphorus (P). DIAMFAB expertise is focused on boron and nitrogen doping.
That’s why at DIAMFAB we do in-situ doping: we incorporate the doping elements during the growth.
Its band gap is 5.5 eV, five times greater than the silicon one at 1.1 eV. It results in a small number of intrinsic carriers at ambient temperature. This property classifies it as an insulating material from its discovery until we were able to dope it in the 80’s.
Its thermal conductivity is around 2200 W/m.K or 5 times copper conductivity.
Diamond’s breakdown field is at 10 MV/cm, 30 times greater than Silicon’s, which allows diamond’s diodes and transistors to withstand voltages of thousands of volts in the OFF state.
The holes and the electrons in diamond have a respective mobility of 2000 cm2/V.s and 1000 cm2/V.s which allow to reduce the joule effect losses while the diamond’s diodes and transistors are in ON state.
Send us a message
25 avenue des Martyrs
38042 Grenoble Cedex 9